Fabrication of nanocrystal forms of ᴅ-cycloserine and their application for transdermal and enteric drug delivery systems

• Hsuan-Ang Tsai,
• Tsai-Miao Shih,
• Theodore Tsai,
• Jhe-Wei Hu,
• Yi-An Lai,
• Jui-Fu Hsiao and
• Guochuan Emil Tsai

Beilstein J. Nanotechnol. 2024, 15, 465–474, doi:10.3762/bjnano.15.42

• other hand, only a few research articles reported DCS formulations for parenteral administration [18][19]. Nanocarriers offer great advantages to many technological fields. For example, polytetrafluoroethylene (PTFE) with silicon carbide nanocrystals can be applied as a photostabilizer or as a UV light

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• during deformation. Other materials of interest for nuclear reactor design that have been the subject of HIM irradiation studies include silicon carbide grains in a pyrolytic carbon matrix [79], α-LiAlO2 pellets [80], tristructural-isotropic fuel particles [81], oxide dispersion-strengthened steels [82

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• and adjacent layers should be studied. It is well established already that graphene grown on silicon carbide is less strained on substrate terraces than on terrace edges, while electron concentration on the edges is lower than that on terraces [4]. This example shows that fluctuations of substrate

A stretchable triboelectric nanogenerator made of silver-coated glass microspheres for human motion energy harvesting and self-powered sensing applications

• Hui Li,
• Yaju Zhang,
• Yonghui Wu,
• Hui Zhao,
• Weichao Wang,
• Xu He and
• Haiwu Zheng

Beilstein J. Nanotechnol. 2021, 12, 402–412, doi:10.3762/bjnano.12.32

• Hui Li Yaju Zhang Yonghui Wu Hui Zhao Weichao Wang Xu He Haiwu Zheng School of Physics and Electronics, Henan University, Kaifeng 475004, China School of Mechanical and Automotive Engineering, Henan Key Laboratory for Advanced Silicon Carbide Materials, Kaifeng University, Kaifeng, 475004, China

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• , quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide

• divacancy (DV) in silicon carbide (SiC) [18][19][20], the silicon monovacancy in SiC [21][22][23], the carbon antisite vacancy pair in SiC [24][25], the silicon vacancy and nitrogen (N) atom on an adjacent carbon site in SiC [26][27][28], and rare-earth impurities in complex oxides [29]. While the NV center

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared. Keywords: color centers; micropillars; proton irradiation; quantum sensing; silicon carbide; vacancy

• ; Introduction Silicon carbide (SiC) is an established material for many electronic devices and has also been considered for photonics applications recently. After the improvement of the purity of the material and the isolation of point defects (primarily vacancies), SiC has been considered to host physical

• and SPS on-demand generation with near-unity indistinguishability [41][42][43]. Silicon carbide micropillars have been used in unrelated mechanical property studies in the past [44][45]. Towards the abovementioned goals, a scalable approach for the design and fabrication of photonics wafers to control

Gold-coated plant virus as computed tomography imaging contrast agent

• Alaa A. A. Aljabali,
• Mazhar S. Al Zoubi,
• Khalid M. Al-Batanyeh,
• Ali Al-Radaideh,
• Mohammad A. Obeid,
• Abeer Al Sharabi,
• Walhan Alshaer,
• Bayan AbuFares,
• Tasnim Al-Zanati,
• Murtaza M. Tambuwala,
• Naveed Akbar and
• David J. Evans

Beilstein J. Nanotechnol. 2019, 10, 1983–1993, doi:10.3762/bjnano.10.195

• from Sigma-Aldrich; potassium carbonate was purchased from BDH; hydroxylamine hydrochloride (99%) was purchased from Lancaster Synthesis; carborundum (fine-grade silicon carbide) was purchased from Parchem; carboxyl-PEG 5000-SH, (1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride) (EDC), N

• , VA). Methods CPMV propagation CPMV propagation followed our previously published method [38]. Black-eyed peas plant (Vigna unguiculata) were grown from seeds, obtained locally, in a greenhouse for 10 days. Primary leaves were rubbed with carborundum (fine-grade silicon carbide abrasive) and treated

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

• Vadim B. Platonov,
• Marina N. Rumyantseva,
• Alexander S. Frolov,
• Alexey D. Yapryntsev and
• Alexander M. Gaskov

Beilstein J. Nanotechnol. 2019, 10, 1537–1547, doi:10.3762/bjnano.10.151

• dispersed silicon carbide (SiC). In this work, ZnO and SiC nanofibers were synthesized by electrospinning of polymer solutions followed by heat treatment, which is necessary for polymer removal and crystallization of semiconductor materials. ZnO/SiC nanocomposites (15–45 mol % SiC) were obtained by mixing

• composite nanomaterials using highly dispersed silicon carbide (SiC). The unique physical and chemical properties of silicon carbide – wide band gap (Eg = 2.4–3.2 eV), high Debye temperature 1400 K, high thermal conductivity of 4.9 W/cm·K, low reactivity to oxygen and water vapor – ensure the stability of

• composite materials with respect to temperature, radiation, chemical and mechanical effects [6][7]. It has been shown that in MO/SiC nanocomposites containing metal oxide (MO) and nanostructured SiC, the presence of silicon carbide inhibits the growth of MO crystallites at high temperatures [8]. The

Hydrothermal-derived carbon as a stabilizing matrix for improved cycling performance of silicon-based anodes for lithium-ion full cells

• Mirco Ruttert,
• Florian Holtstiege,
• Jessica Hüsker,
• Markus Börner,
• Martin Winter and
• Tobias Placke

Beilstein J. Nanotechnol. 2018, 9, 2381–2395, doi:10.3762/bjnano.9.223

• porous, amorphous structure that is able to accommodate the volumetric changes of the Si during the lithiation/delithiation process. The formation of silicon carbide (SiC) or any other crystalline SiOx phases in detectable amounts is also avoided at this temperature as can be reasoned from the absence of

Correlative electrochemical strain and scanning electron microscopy for local characterization of the solid state electrolyte Li_1.3Al_0.3Ti_1.7(PO₄)₃

• Nino Schön,
• Deniz Cihan Gunduz,
• Shicheng Yu,
• Hermann Tempel,
• Roland Schierholz and
• Florian Hausen

Beilstein J. Nanotechnol. 2018, 9, 1564–1572, doi:10.3762/bjnano.9.148

• by oil-based polishing to minimize exposure of LATP to water. For the first grinding step, silicon carbide paper of 800 grit was used with a particle size of about 20 µm. Step-wise, finer grit sandpapers were used: 1200 (15 µm), 2400 (10 µm) and ending with 4000 (5 µm). At each step, the sample was

Room-temperature single-photon emitters in titanium dioxide optical defects

• Kelvin Chung,
• Yu H. Leung,
• Chap H. To,
• Aleksandra B. Djurišić and
• Snjezana Tomljenovic-Hanic

Beilstein J. Nanotechnol. 2018, 9, 1085–1094, doi:10.3762/bjnano.9.100

• types of single-photon emitters that include molecules [3], trapped atoms [4], quantum dots [5] and defects in diamond [6]. More recently point defects of wide-bandgap semiconductors, such as zinc oxide (ZnO) [7][8][9] and silicon carbide [10], were shown to exhibit room-temperature single-photon

Graphene composites with dental and biomedical applicability

• Sharali Malik,
• Felicite M. Ruddock,
• Adam H. Dowling,
• Kevin Byrne,
• Wolfgang Schmitt,
• Ivan Khalakhan,
• Yoshihiro Nemoto,
• Hongxuan Guo,
• Lok Kumar Shrestha,
• Katsuhiko Ariga and
• Jonathan P. Hill

Beilstein J. Nanotechnol. 2018, 9, 801–808, doi:10.3762/bjnano.9.73

• removed from the mould, inspected and specimens containing visual defects were discarded. The flat ends of the specimens were hand-lapped on P600 silicon carbide paper (Beuhler, Lake Bluff, Illinois, USA) under water lubrication to ensure parallel specimen ends for uniform contact with the platens of the

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• contact when switching to the on state [70]. Silicon carbide: Silicon carbide (SiC), well-known for its resistance to corrosion, has been widely explored for harsh environment applications where traditional semiconductor materials fail. In addition, it has tribological characteristics superior to those of

Design of photonic microcavities in hexagonal boron nitride

• Sejeong Kim,
• Milos Toth and
• Igor Aharonovich

Beilstein J. Nanotechnol. 2018, 9, 102–108, doi:10.3762/bjnano.9.12

• silicon carbide [19][20]. The hybrid approach is easier from the fabrication point of view but is inherently limited by the fact that the electric field maxima of optical modes are situated within the cavities, and optimal coupling therefore remains a challenge. The optical properties of hBN make it an

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• DI, from this study there emerge two approaches worth exploring in the deposition of silicon containing nanostructures. First, the fact that the initial stoichiometric Si/C ratio is maintained in the deposit indicates that the deposition of silicon carbide may be achieved with a similar precursor

• with a higher Si/C ratio. We have identified the commercially available candidate trisilacyclohexane (TSCH) in which the stoichiometric Si/C ratio is 1:1, i.e., that of silicon carbide. We are currently studying this precursor. The oxygen content observed in the deposits of SCH, however, indicates that

• the formation of silicon carbide from the potential precursor TSCH might be further promoted through deposition under reductive conditions, e.g., in the presence of hydrogen. Secondly, the observable promotion of SiO2 formation from DCSCH, through hydrolysis of the Si–Cl bonds is a well-known process

Preparation of thick silica coatings on carbon fibers with fine-structured silica nanotubes induced by a self-assembly process

• Benjamin Baumgärtner,
• Hendrik Möller,
• Thomas Neumann and
• Dirk Volkmer

Beilstein J. Nanotechnol. 2017, 8, 1145–1155, doi:10.3762/bjnano.8.116

• a reference to the oxidation protection due to the possibility of sintering the fine-structure at elevated temperatures associated with a carbothermal reduction to silicon carbide [6]. Results and Discussion Deposition of thin silica films onto carbon fiber surfaces via chemical modification with

• coating procedure and the adaptability to other fiber materials are illustrated by using silicon carbide fibers (Figure 11). Again, the molecular-level interactions of the alternative fiber surface and LPEI are important for facilitation of the polyamine self-assembly. Polyethylene based fibers are a less

• attractive substrate. However, an exhaustive coating can be easily achieved for fibers consisting of silicon carbide, aramid, steel, glass and basalt (Supporting Information File 1, Figure S10). Conclusion A site-selective biomimetic silica deposition was accomplished via immobilization of linear polyamines

Hierarchically structured nanoporous carbon tubes for high pressure carbon dioxide adsorption

• Julia Patzsch,
• Deepu J. Babu and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 1135–1144, doi:10.3762/bjnano.8.115

• their micro- and mesopores. The micropore regime of the carbon tubes is composed of turbostratic graphitic areas observed in the microstructure. The employed templating process was also used for the synthesis of silicon carbide tubes. The characterization of all porous materials was performed by

• tubes. Keywords: carbon dioxide adsorption; carbon tubes; gas adsorption; mesoporous carbon; Introduction Nanostructured carbon and silicon carbide materials have numerous potential applications. Structured carbons such as graphene, carbon nanotubes, carbon fibres or hierarchical porous carbons were

• mesoporous carbon [8], single-wall carbon nanotubes (CNTs) [9], multiwall CNTs [10], double-wall aligned CNTs [11] as well as graphene [12]. In the case of (ii), oxygen groups such as C–O and C=O were introduced on the carbon surface to enhance the adsorption of gases such as CO2 [11]. Silicon carbide is

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• , epitaxy on silicon carbide or chemical vapor deposition (CVD) on catalytic metals [5]. Besides meeting the requirements of film quality and cost, the scalability to 200 or 300 mm wafer sizes is crucial for being suitable for industrial production. Currently, the highest-quality graphene synthesis method

Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• graphite [11]. Considering the scalable graphene production methods, epitaxial graphene grown on silicon carbide has also been demonstrated as an excellent material for sensing [12]. However, for many applications, flexible and disposable sensors are needed. For these applications graphene has to be easily

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS₂ in O₂-controlled atmosphere

• Aurora Piazza,
• Filippo Giannazzo,
• Gianpiero Buscarino,
• Gabriele Fisichella,
• Antonino La Magna,
• Fabrizio Roccaforte,
• Marco Cannas,
• Franco Mario Gelardi and
• Simonpietro Agnello

Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44

• availability of Gr paved the way for studies and applications in many fields of materials science and technology including optics, electronics, and photovoltaics [5][6]. In these contexts, different growth processes optimized to obtain large area-samples, comprising epitaxial growth on silicon carbide [7][8

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality

• characteristics of the devices and their sensitivity. A simpler solution is to use Schottky diode sensors, which can be grown more easily, have no gate insulator and a high sensitivity in the reverse and forward diode regimes. During the last decade the thermal decomposition of silicon carbide (SiC) in argon

• result of the interaction between graphene and the SiC substrate: where χ is the electron affinity of silicon carbide. To make the theoretical analysis tractable, three simplifying assumptions were used. First, we consider small H-terminated clusters as a graphene model. It is generally accepted that the

Nano- and microstructured materials for in vitro studies of the physiology of vascular cells

• Alexandra M. Greiner,
• Adria Sales,
• Hao Chen,
• Sarah A. Biela,
• Dieter Kaufmann and
• Ralf Kemkemer

Beilstein J. Nanotechnol. 2016, 7, 1620–1641, doi:10.3762/bjnano.7.155

• - and nanostructuring are glass [119], ceramics [119][120][121][122] or natural polymers that can also be synthetically modified by, e.g., functionalizing with an artificial polymeric group [113][123]. Coating of these materials with silicon carbide, expanded polytetrafluoroethylene, tantalum, and

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

• silicon carbide (SiC) has also been extensively explored as it results in wafer-scale growth. Additionally, SiC is an excellent substrate for many electronics applications, avoiding the need to transfer to another substrate. High-quality graphene with a controlled thickness and a specific crystallographic

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• ) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate

• the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination. Keywords: copper alloy; electrostatic force microscopy; high-voltage device; Kelvin probe force microscopy; silicon carbide (SiC); surface photo

• remove the oxide layer. Second, two different silicon carbide (SiC) devices are analysed and discussed. A calibration layer structure containing precisely defined p/n-interfaces is used to elaborate the challenges associated to KPFM and SPV measurements on semiconducting surfaces. Furthermore, a complex

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

• Mykola Telychko,
• Jan Berger,
• Zsolt Majzik,
• Pavel Jelínek and
• Martin Švec

Beilstein J. Nanotechnol. 2015, 6, 901–906, doi:10.3762/bjnano.6.93

• hinders applications of epitaxial graphene in the nanoelectronics [1]. The two main methods of epitaxial graphene growth are chemical vapor deposition (CVD) on metal surfaces [2] and annealing of silicon carbide (SiC) [3]. The large conductivity of metal substrates leaves graphene on metals as model-only